DatasheetsPDF.com

IRL620A

Fairchild Semiconductor
Part Number IRL620A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 30, 2007
Detailed Description $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ L...
Datasheet PDF File IRL620A PDF File

IRL620A
IRL620A

Overview
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 200V ♦ Lower RDS(ON): 0.
609Ω (Typ.
) IRL620A BVDSS = 200 V RDS(on) = 0.
8Ω ID = 5 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 200 5 3.
2 18 ±20 33 5 3.
9 5 39 0.
31 - 55 to +150 Units V A A V mJ A mJ V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -Max.
3.
17 -62.
5 °C/W Units Rev.
B ©1999 Fairchild Semiconductor Corporation 1 IRL620A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min.
Typ.
Max.
Units 200 -1.
0 -----------------0.
18 ------3.
3 330 55 25 8 6 24 6 10.
3 2.
0 4.
4 --2.
0 100 -100 10 100 0.
8 -430 70 30 25 20 60 20 15 --nC ns pF µA Ω Ω V V nA 1&+$11(...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)