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IRLI2203G

International Rectifier
Part Number IRLI2203G
Manufacturer International Rectifier
Description POWER MOSFET
Published May 30, 2007
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.1092A IRLI2203G HEXFET® Power MOSFET Advanced Process Technology Ult...
Datasheet PDF File IRLI2203G PDF File

IRLI2203G
IRLI2203G

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
1092A IRLI2203G HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.
5KVRMS Sink to Lead Creepage Dist.
= 4.
8mm Logic-Level Gate Drive RDS(on) Specified at VGS=5.
0V & 10V Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with st...


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