DatasheetsPDF.com

IRLI3103

International Rectifier
Part Number IRLI3103
Manufacturer International Rectifier
Description POWER MOSFET
Published May 30, 2007
Detailed Description PD 9.1377 PRELIMINARY Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K...
Datasheet PDF File IRLI3103 PDF File

IRLI3103
IRLI3103



Overview
PD 9.
1377 PRELIMINARY Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
IRLI3103 HEXFET ® Power MOSFET VDSS = 30V RDS(on) = 0.
014 Ω ID = 38A Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
38 27 220 38 0.
25 ± 20 240 34 3.
8 2.
0 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ.
––– ––– Max.
4.
0 65 Units °C/W IRLI3103 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
C...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)