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IRLR2905ZPBF

International Rectifier
Part Number IRLR2905ZPBF
Manufacturer International Rectifier
Description POWER MOSFET
Published May 30, 2007
Detailed Description PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistan...
Datasheet PDF File IRLR2905ZPBF PDF File

IRLR2905ZPBF
IRLR2905ZPBF

Overview
PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 13.
5mΩ ID = 42A S D-Pak I-Pak IRLR2905ZPbF IRLU2905ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA RθJA j Parameter Junction-to-Case ij Junction-to-Ambient (PCB mount) j Junction-to-Ambient Max.
60 43 42 240 110 0.
72 ± 16 57 85 See Fig.
12a, 12b, 15, 16 -55 to + 175 300 (1.
6mm from case ) y y 10 lbf in (1.
1N m) Typ.
––– ––– ––– Max.
1.
38 40 110 Units A W W/°C V mJ A mJ °C Units °C/W HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com 1 10/1/10 IRLR/U2905ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Drain-to-Source Breakdown Vo...


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