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NX7361JB-BC

CEL
Part Number NX7361JB-BC
Manufacturer CEL
Description LASER DIODE
Published May 31, 2007
Detailed Description NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) FEATURES • HIGH OUTPUT ...
Datasheet PDF File NX7361JB-BC PDF File

NX7361JB-BC
NX7361JB-BC

Overview
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) FEATURES • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% • LONG WAVELENGTH: λC = 1310 nm • INTERNAL THERMOELECTRIC COOLER, THERMISTOR • HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE • SINGLE MODE FIBER PIGTAIL NX7361JB-BC DESCRIPTION NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.
It is designed for light sources of optical measurement equipment (OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise spec...


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