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STPS40L15CW

STMicroelectronics
Part Number STPS40L15CW
Manufacturer STMicroelectronics
Description (STPS40L15CT/CW) LOW DROP OR-ing POWER SCHOTTKY DIODE
Published May 31, 2007
Detailed Description ® STPS40L15CW/CT LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) ...
Datasheet PDF File STPS40L15CW PDF File

STPS40L15CW
STPS40L15CW

Overview
® STPS40L15CW/CT LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2 x 20 A 15 V 150°C 0.
33 V A2 K FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS A1 K A2 A2 K A1 DESCRIPTION Dual center tap schottky rectifier packaged in TO-220AB and TO-247, this device is especially intended for use as OR-ing diode in fault tolerant power supply equipments.
TO-220AB STPS40L15CT TO-247 STPS40L15CW ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt * : Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tcase = 140°C δ=1 Total Per diode Value 15 30 40 20 310 2 3 - 65 to + 150 150 10000 A A A °C °C V/µs Unit V A A tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz tp = 100 µs dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj November 1999 - Ed: 4A 1/5 STPS40L15CW/CT THERMAL RESISTANCES Symbol Rth(j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 1.
6 0.
85 0.
1 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.
18 x IF(AV) + 0.
008 IF2(RMS) IF = 19 A IF = 40 A IF = 19 A IF = 40 A 0.
28 0.
42 VR = VRRM 200 Min.
Typ.
Max.
6 500 0.
41 0.
52 0.
33 0.
50 V Unit mA VF * Fig.
1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) δ = 0.
1 δ = 0.
05 δ = 0.
2 δ = 0.
5 δ=1 Fig.
2: Average forward curr...


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