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IRF6716MPBF

Part Number	IRF6716MPBF
Manufacturer	International Rectifier
Description	N-Channel HEXFET Power MOSFET
Published	May 31, 2007
Detailed Description	IRF6716MPbF IRF6716MTRPbF l l l l l l l l l l PD - 97274 RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(...
Datasheet	IRF6716MPBF PDF File

Overview

IRF6716MPbF IRF6716MTRPbF l l l l l l l l l l PD - 97274 RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.
6 mm) 25V max ±20V max 1.
2mΩ@10V 2.
0mΩ@ 4.
5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 39nC 12nC 5.
3nC 28nC 27nC 1.
9V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync.
FET socket of Sync.
Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested MX DirectFET ISOMETRIC Typical values (unless otherwise specified) DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.
6 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of www.
DataSheet4U.
com processors operating at higher frequencies.
The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applic...

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IRF6716MPBF N-Channel HEXFET Power MOSFET - International Rectifier

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