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STP30NE06LFP

STMicroelectronics
Part Number STP30NE06LFP
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published May 31, 2007
Detailed Description ® STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP30NE06L STP...
Datasheet PDF File STP30NE06LFP PDF File

STP30NE06LFP
STP30NE06LFP

Overview
® STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.
035 Ω - 30A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP30NE06L STP30NE06LF P s s s s V DSS 60 V 60 V R DS( on ) < 0.
05 Ω < 0.
05 Ω ID 30 A 17 A TYPICAL RDS(on) = 0.
035 Ω 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
www.
DataSheet4U.
com TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value ST P30NE06L V DS V DGR V GS ID ID I DM ( • ) P tot V ISO T s tg Tj March 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max.
O perating Junct ion T emperature o o o Unit STP30NE06L FP 60 60 ± 20 V V V 17 12 68 30 0.
2 2000 A A A W W/ oC V o o 30 21 120 80 0.
53  -65 to 175 175 C C 1/9 (•) Pulse width limited by safe operating area STP30NE06L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.
875 62.
5 0.
5 300 TO-220FP 5 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 20 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tca...


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