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AP10N70R-A

A-POWER
Part Number AP10N70R-A
Manufacturer A-POWER
Description N-CHANNEL MOSFET
Published Jun 4, 2007
Detailed Description AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Perf...
Datasheet PDF File AP10N70R-A PDF File

AP10N70R-A
AP10N70R-A

Overview
AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp.
▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Requirement ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.
6Ω 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications.
The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
www.
DataSheet4U.
com G D S TO-262(R) G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ± 30 10 6.
8 40 174 1.
39 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 0.
72 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200519062-1/4 AP10N70R/P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o o Test Conditions VGS=0V, I...


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