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IRF2907LPbF

Part Number	IRF2907LPbF
Manufacturer	International Rectifier
Description	(IRF2907ZxPbF) HEXFET Power MOSFET
Published	Jun 4, 2007
Detailed Description	PD - 95489A AUTOMOTIVE MOSFET Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Adva...
Datasheet	IRF2907LPbF PDF File

Overview

PD - 95489A AUTOMOTIVE MOSFET Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.
5mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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DataSheet4U.
com ID = 75A TO-220AB IRF2907ZPbF D2Pak IRF2907ZSPbF TO-262 IRF2907ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tes...

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IRF2907LPbF (IRF2907ZxPbF) HEXFET Power MOSFET - International Rectifier

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