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IRLML6401PBF

International Rectifier
Part Number IRLML6401PBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jun 4, 2007
Detailed Description PD - 94891A IRLML6401PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm...
Datasheet PDF File IRLML6401PBF PDF File

IRLML6401PBF
IRLML6401PBF

Overview
PD - 94891A IRLML6401PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.
1mm) Available in Tape and Reel Fast Switching 1.
8V Gate Rated Lead-Free HEXFET® Power MOSFET G 1 3 D S 2 VDSS = -12V RDS(on) = 0.
05Ω Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro3 allows it to fit easily int...


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