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IRFPS3815PBF

Part Number	IRFPS3815PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 5, 2007
Detailed Description	PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic...
Datasheet	IRFPS3815PBF PDF File

Overview

PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V G S RDS(on) = 0.
015Ω ID = 105A Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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IRFPS3815PBF HEXFET Power MOSFET - International Rectifier

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