DatasheetsPDF.com

IRG4BC10KDPBF

Part Number	IRG4BC10KDPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 5, 2007
Detailed Description	PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit ...
Datasheet	IRG4BC10KDPBF PDF File

Overview

PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free G E VCE(on) typ.
= 2.
39V @VGE = 15V, IC = 5.
0A n-channel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with I...

Similar Datasheet

IRG4BC10KDPBF HEXFET Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)