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IRG4BC40UPBF

Part Number	IRG4BC40UPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Jun 5, 2007
Detailed Description	PD - 95428A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40UPbF UltraFast Speed IGBT Features UltraFast: optimized for h...
Datasheet	IRG4BC40UPBF PDF File

Overview

PD - 95428A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40UPbF UltraFast Speed IGBT Features UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C G E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ.
= 1.
72V @VGE = 15V, IC = 20A Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maxim...

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IRG4BC40UPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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