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IRGBC30F

International Rectifier
Part Number IRGBC30F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 5, 2007
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching...
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IRGBC30F
IRGBC30F

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.
1V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
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