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IRFU1010ZPBF

International Rectifier
Part Number IRFU1010ZPBF
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Jun 8, 2007
Detailed Description PD - 95951 AUTOMOTIVE MOSFET Features l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process ...
Datasheet PDF File IRFU1010ZPBF PDF File

IRFU1010ZPBF
IRFU1010ZPBF

Overview
PD - 95951 AUTOMOTIVE MOSFET Features l l l l l l IRFR1010ZPbF IRFU1010ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 7.
5mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings Parameter G S ID = 42A www.
DataSheet4U.
com D-Pak IRFR1010Z Max.
91 65 42 360 140 0.
9 ± 20 I-Pak IRFU1010Z Units A ID @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) ID @ T C = 100°C Continuous Drain Current, V GS @ 10V ID @ T C = 25°C IDM Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current ™ P D @T C = 25°C Power Dissipation V GS E AS (Tested ) IAR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage W W/°C V mJ A mJ E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 110 220 See Fig.
12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.
6mm from case ) 10 lbf in (1.
1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance R θJC R θJA R θJA Junction-to-Case y y j Parameter Typ.
Max.
1.
11 40 110 Units °C/W Junction-to-Ambient (PCB mount) Junction-to-Ambient j ij ––– ––– ––– HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com 1 12/20/04 IRFR/U1010ZPbF Electrical Characteristics @ TJ = 25°C (unless otherwise spe...


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