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IRGIB10B60KD1

International Rectifier
Part Number IRGIB10B60KD1
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 9, 2007
Detailed Description PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) No...
Datasheet PDF File IRGIB10B60KD1 PDF File

IRGIB10B60KD1
IRGIB10B60KD1

Overview
PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C G E C VCES = 600V IC = 10A, TC=100°C tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel VCE(on) typ.
= 1.
7V Absolute Maximum Ratings com TO-220 Full-Pak Max.
600 16 10 A 32 32 16 10 32 2500 ±2...


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