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IRGIH50F

International Rectifier
Part Number IRGIH50F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 9, 2007
Detailed Description PD -90930B IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Seale...
Datasheet PDF File IRGIH50F PDF File

IRGIH50F
IRGIH50F

Overview
PD -90930B IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) max =2.
9V @VGE = 15V, IC = 25A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current applications.
The performance of various IGBTs varies greatly with frequency.
Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
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