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IRGPC20K

International Rectifier
Part Number IRGPC20K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jun 9, 2007
Detailed Description PD - 9.1129 IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switc...
Datasheet PDF File IRGPC20K PDF File

IRGPC20K
IRGPC20K

Overview
PD - 9.
1129 IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig.
1 for Current vs.
Frequency curve C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(sat) ≤ 3.
5V @VGE = 15V, IC = 6.
0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current application...


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