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ZXMP6A16DN8

Zetex Semiconductors
Part Number ZXMP6A16DN8
Manufacturer Zetex Semiconductors
Description Dual P-Channel MOSFET
Published Jun 12, 2007
Detailed Description ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A DESCRIPTION...
Datasheet PDF File ZXMP6A16DN8 PDF File

ZXMP6A16DN8
ZXMP6A16DN8

Overview
ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.
085 ; ID= -3.
9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package www.
DataSheet4U.
com SO8 APPLICATIONS • DC-DC converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE ZXMP6A16DN8TA ZXMP6A16DN8TC REEL 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMP 6A16D Top view ISSUE 3 - MAY 2005 1 ZXMP6A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(d) @V GS =10V; T A =70 Њ C (b)(d) @V GS =10V; T A =25 Њ C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID LIMIT -60 Ϯ20 -3.
9 -3.
1 -2.
9 -18.
3 -3.
2 -18.
3 1.
25 10 1.
81 14.
5 2.
15 17 -55 to +150 UNIT V V A A A A A A W mW/°C W mW/°C W mW/°C °C I DM IS I SM PD PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient NOTES (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.
05 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with...


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