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APT75GP120B2

Advanced Power Technology
Part Number APT75GP120B2
Manufacturer Advanced Power Technology
Description IGBT
Published Jun 12, 2007
Detailed Description APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. ...
Datasheet PDF File APT75GP120B2 PDF File

APT75GP120B2
APT75GP120B2

Overview
APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 800V, 20A • 50 kHz operation @ 800V, 38A • RBSOA rated E C G E MAXIMUM RATINGS Symbol VCES VGE www.
DataSheet4U.
com All Ratings: TC = 25°C unless otherwise specified.
APT75GP120B2 UNIT Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 7 1200 ±20 ±30 100 91 300 300A @ 960V 1042 -55 to 150 300 Watts °C Amps Volts VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operat...


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