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2731-100M

Microsemi Corporation
Part Number 2731-100M
Manufacturer Microsemi Corporation
Description Radar
Published Jun 13, 2007
Detailed Description 2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION The 2731-100M is an inter...
Datasheet PDF File 2731-100M PDF File

2731-100M
2731-100M

Overview
2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band.
The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis.
This ceramic sealed transistor is specifically designed for S-band radar applications.
It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE 55KS-1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 575 Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.
0 Collector Current (Ic) 15.
0 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 www.
DataSheet4U.
com W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL P...


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