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SFS9410

SemiWell Semiconductor
Part Number SFS9410
Manufacturer SemiWell Semiconductor
Description Logic N-Channel MOSFET
Published Jun 20, 2007
Detailed Description SemiWell Semiconductor SFS9410 Logic N-Channel MOSFET Features ■ RDS(on) (Max 0.028Ω )@VGS=10V RDS(on) (Max 0.042Ω )@...
Datasheet PDF File SFS9410 PDF File

SFS9410
SFS9410

Overview
SemiWell Semiconductor SFS9410 Logic N-Channel MOSFET Features ■ RDS(on) (Max 0.
028Ω )@VGS=10V RDS(on) (Max 0.
042Ω )@VGS=4.
5V Gate Charge (Typical 18nC) Maximum Junction Temperature Range (150°C) Available in Tape and Reel Symbol D D D D 5 6 7 8 4 3 2 1 G S S S ■ ■ ■ General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.
This Power MOSFET is well suited for power management circuit or DC-DC converter.
8-SOIC D D D D S S S G www.
DataSheet4U.
com Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TA = 25°C) Drain Current Pulsed Gate to Source Voltage Total Power Dissipation Single Operation (TA=25°C) Total Power Dissipation Single Operation (TA=70°C) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 1) Parameter Value 30 7.
3 20 Units V A A V W W °C °C ±20 2.
5 1.
6 - 55 ~ 150 300 Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (Note 4) Value Min.
- Typ.
- Max.
50 Units °C/W January, 2003.
Rev.
0.
Copyright@SemiWell Semiconductor Co.
, Ltd.
, All rights reserved.
1/6 SFS9410 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10 V, ID = 7.
3A VGS = 4.
5 V, ID = 6.
3A 30 13.
5 2 100 -100 V mV/°C uA nA nA ( TJ = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units On Characterist...


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