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M58WR032EB

ST Microelectronics
Part Number M58WR032EB
Manufacturer ST Microelectronics
Description Flash Memory
Published Jun 21, 2007
Detailed Description M58WR032ET M58WR032EB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ www....
Datasheet PDF File M58WR032EB PDF File

M58WR032EB
M58WR032EB

Overview
M58WR032ET M58WR032EB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.
8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ www.
DataSheet4U.
com ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.
65V to 2.
2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100ns PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – Progr...


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