DatasheetsPDF.com

M58WR016KU

ST Microelectronics
Part Number M58WR016KU
Manufacturer ST Microelectronics
Description Flash memories
Published Jun 21, 2007
Detailed Description M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Bu...
Datasheet PDF File M58WR016KU PDF File

M58WR016KU
M58WR016KU

Overview
M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.
8 V supply Flash memories Features ■ Supply voltage – VDD = 1.
7 V to 2 V for Program, Erase and Read – VDDQ = 1.
7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 86 MHz – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time – 10 µs by Word typical for Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options Memory blocks – Multiple Bank memory array: 4 Mbit Banks – Parameter Blocks (top or bottom location) Dual operati...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)