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M36L0R7060T1

ST Microelectronics
Part Number M36L0R7060T1
Manufacturer ST Microelectronics
Description Flash memory
Published Jun 21, 2007
Detailed Description M36L0R7060T1 M36L0R7060B1 128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supp...
Datasheet PDF File M36L0R7060T1 PDF File

M36L0R7060T1
M36L0R7060T1

Overview
M36L0R7060T1 M36L0R7060B1 128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.
8 V supply, multichip package Features ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory – 1 die of 64 Mbit (4 Mb x16) Pseudo SRAM Supply voltage – VDDF = VCCP = VDDQF = 1.
7 to 1.
95 V – VPPF = 9 V for fast program Electronic signature – Manufacturer Code: 20h – Top Device Code M36L0R7060T1: 88C4h – Bottom Device Code M36L0R7060B1: 88C5h Package – ECOPACK® FBGA ■ TFBGA88 (ZAQ) 8 x 10 mm ■ ■ ■ www.
DataSheet4U.
com Security – 64 bit unique device number – 2112 bit user programmable OTP Cells Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS ■ Flash memory ■ Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz, 66 MHz – Random Access: 70 ns, 85 ns Synchronous Burst Read Suspend Prog...


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