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BFN17

Zetex Semiconductors
Part Number BFN17
Manufacturer Zetex Semiconductors
Description SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Published Jun 23, 2007
Detailed Description www.DataSheet4U.com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN17 C COMPLEMENTARY T...
Datasheet PDF File BFN17 PDF File

BFN17
BFN17

Overview
www.
DataSheet4U.
com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN17 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN16 DG E C B SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -250 -250 -5 -500 -200 -100 -1 -65 to +150 UNIT V V V mA mA mA W °C ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO MIN.
-250 -250 -5 -100 -20 -100 -0.
4 -0.
9 25 40 40 Typ.
100 Typ.
2.
5 MHz pF MAX.
UNIT V V V nA µA nA V V CONDITIONS.
I C=-100 µ A I C=-1mA I E=-100 µ A V CB=-250V V CB=-250V, T amb=150 °C V EB=-3V I C=-20mA, I B=-2mA I C =-20mA, I B=-2mA I C=-1mA, V CE=-10V* I C=-10mA, V CE=-10V* I C=-30mA, V CE=-10V* I C=-20mA, V CE=-10V* f=20MHz V CB=-30V,f=1MHz Collector Cut-Off Current I CBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance I EBO V CE(sat) V BE(sat) h FE fT C obo * Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤ 2% For typical characteristics graphs see FMMTA92 datasheet 3 - 43 ...


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