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BFN19

Zetex Semiconductors
Part Number BFN19
Manufacturer Zetex Semiconductors
Description SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Published Jun 23, 2007
Detailed Description www.DataSheet4U.com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 BFN19 C COMPLEMENTARY T...
Datasheet PDF File BFN19 PDF File

BFN19
BFN19

Overview
www.
DataSheet4U.
com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 BFN19 C COMPLEMENTARY TYPE - BFN18 PARTMARKING DETAIL - DH E C B ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -300 -300 -5 -500 -200 -100 -1 -65 to +150 UNIT V V V mA mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 30 Typ.
100 Typ.
2.
5 MHz pF MIN.
-300 -300 -5 -100 -20 -100 -0.
5 -0.
9 MAX.
V V V nA µA nA V V UNIT CONDITIONS.
I C=-100 µ A I C=-1mA* I E=-100 µ A V CB=-250V V CB=-250V, T amb=150°C V EB=-3V I C=-20mA, I B=-2mA I C=-20mA, I B=-2mA I C=-1mA, V CE=-10V* I C=-10mA, V CE=-10V* I C=-30mA, V CE=-10V* I C=-20mA, V CE=-10V f=20MHz V CB=-30V,f=1MHz fT C obo *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤ 2% For typical characteristics graphs see FMMTA92 datasheet.
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