DatasheetsPDF.com

FXT618

Zetex Semiconductors
Part Number FXT618
Manufacturer Zetex Semiconductors
Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Published Jun 24, 2007
Detailed Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – JULY 1995 FEATURES * 10A Peak pulse current * Excellent h...
Datasheet PDF File FXT618 PDF File

FXT618
FXT618

Overview
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.
g.
7mV typ.
* IC cont 3.
5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 www.
DataSheet4U.
com ZTX618 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptotp Ptot Tj:Tstg VALUE 20 20 5 10 3.
5 500 1.
5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.
C.
B.
with copper equal to 1 sq.
Inch minimum.
ZTX618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 7 80 210 0.
93 0.
86 200 300 170 40 100 400 450 300 85 140 23 170 400 30 MHz pF ns ns MIN.
20 20 5 TYP.
100 27 8.
3 100 100 100 15 150 255 1.
05 1.
0 MAX.
UNIT V V V nA nA nA mV mV mV V V CONDITIONS.
IC=100µ A IC=10mA* IE=100µ A VCB=16V VEB=4V VCES=16V IC=0.
1A, IB=10mA* IC=1A, IB=10mA* IC=3.
5A, IB=50mA* IC=3.
5A, IB=50mA* IC=3.
5A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA VBE(sat) VBE(on) hFE fT Cobo t(on) t(off) *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤ 2% ZTX618 TYPICAL CHARACTERISTICS 0.
4 25°C 0.
4 I+/I*=50 0.
3 I+/I*=100 I+/I*=5...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)