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FXT757

Zetex Semiconductors
Part Number FXT757
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
Published Jun 24, 2007
Detailed Description PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous c...
Datasheet PDF File FXT757 PDF File

FXT757
FXT757

Overview
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 300 Volt VCEO * 0.
5 Amp continuous current * Ptot= 1 Watt www.
DataSheet4U.
com FXT757 B C E REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -300 -300 -5 -1 -0.
5 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN.
-300 -300 -5 -100 -100 -0.
5 -1.
0 -1.
0 40 50 30 20 TYP.
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage MAX.
UNIT V V V nA nA V V V CONDITIONS.
IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo MHz pF IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤2% 3-60 ...


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