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BZP61

Zetex Semiconductors
Part Number BZP61
Manufacturer Zetex Semiconductors
Description (BZP61 / BZP62) Silicon Power Zener Diode
Published Jun 27, 2007
Detailed Description BZP61 / BZP62 Silicon Power Zener Diode Part no. Description The BZP61/62 are plastic sealed 35A- forward current diodes...
Datasheet PDF File BZP61 PDF File

BZP61
BZP61

Overview
BZP61 / BZP62 Silicon Power Zener Diode Part no.
Description The BZP61/62 are plastic sealed 35A- forward current diodes, which are available in different Zener voltages.
Features • • • • Applications • • Forward current 35A Zener voltages 22V, 27V, 33V or 39V Plastic sealed press-fit package Available in different package modifications Power supplies Rectifier diode in car alternators Pinout details BZP61: 1 - cathode 2 - anode BZP62: 1 - anode 2 - cathode Typical application circuit exciting current Alternator www.
DataSheet4U.
com 1 2 + 3 x BZP61 3x BZP62 Ordering information Device BZP61-22; …; BZP61-39 BZP62-22; …; BZP62-39 Quantity per box 500 500 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.
pdf” Device marking Devices are identified by type.
Colour of marking: BZP61- black, BZP62 – red 422…….
date code 422 = 2004 week 22 ZETEX BZP61……………………………….
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diode type 22………………………….
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Zener voltage VZ (in V) 22 Issue 2 – August 2006 © Zetex Semiconductors plc 2006 1 www.
zetex.
com BZP61 / BZP62 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter BZP61-22 Z-current (continuous) BZP61-27 BZP61-33 BZP61-39 Mean forward current BZP62-22 BZP62-27 BZP62-33 BZP62-39 IF(AV) IZ Symbol 5.
5 4.
5 3.
8 3.
3 35 600 Surge forward current IFSM 500 A A sinusoidal, f = 15 - 1000 Hz TJ = 25°C, half-sine wave, ≤ 10 ms TJ = 175°C, half-sine wave, ≤ 10 ms TJ = 25°C, half-sine wave, ≤ 10 ms TJ = 175°C, half-sine wave, ≤ 10 ms f = 15 - 1000 Hz sinusoidal, f = 15 - 1000 Hz A Tc = 25°C Unit Test condition 1800 Maximum rated value ∫i²dt 1250 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=π*IF(AV) IF(RMS) TJmax Tstg 110 55 140 - 50 to + 140 A A °C °C A²s Thermal resistance Parameter Junction to case Symbol RθJC Value 0.
8 Unit °C/W Issue 2 – August 2006 © Zetex Semiconductors plc 2006 ...


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