DatasheetsPDF.com

IRF2903ZLPBF

International Rectifier
Part Number IRF2903ZLPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 27, 2007
Detailed Description PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switc...
Datasheet PDF File IRF2903ZLPBF PDF File

IRF2903ZLPBF
IRF2903ZLPBF

Overview
PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF2903ZSPbF IRF2903ZLPbF HEXFET® Power MOSFET D VDSS = 30V G RDS(on) = 2.
4mΩ S ID = 75A D D S D G D2Pak S D G TO-262 G Absolute Maximum Ratings Gate Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor d VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) IAR EAR h Single Pulse Avalanche Energy Tested Value Ù Avalanche Current g Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds D Drain S Source Max.
235 166 75 1020 231 1.
54 ± 20 231 820 See Fig.
12a, 12b, 15, 16 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V mJ A mJ °C Thermal Resistance Parameter RθJC RθJA RθJA j Junction-to-Case j Junction-to-Ambient ij Junction-to-Ambient (PCB Mount, steady state) Typ.
––– ––– ––– Max.
0.
65 62 40 Units www.
irf.
com 1 07/22/10 IRF2903ZS/ZLPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)