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IRF2903ZSPBF

Part Number	IRF2903ZSPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Jun 27, 2007
Detailed Description	PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switc...
Datasheet	IRF2903ZSPBF PDF File

Overview

PD - 96098A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF2903ZSPbF IRF2903ZLPbF HEXFET® Power MOSFET D VDSS = 30V G RDS(on) = 2.
4mΩ S ID = 75A D D S D G D2Pak S D G TO-262 G Absolute Maximum Ratings Gate Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current...

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IRF2903ZSPBF Power MOSFET - International Rectifier

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