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MG150J1ZS50

Toshiba Semiconductor
Part Number MG150J1ZS50
Manufacturer Toshiba Semiconductor
Description Silicon N Channel IGBT
Published Jun 27, 2007
Detailed Description MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Appli...
Datasheet PDF File MG150J1ZS50 PDF File

MG150J1ZS50
MG150J1ZS50

Overview
MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case.
l High input impedance l Includes a complete half bridge in one package.
l Enhancement-mode l High speed : tf = 0.
30µs (max) (IC = 150A) trr = 0.
15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.
70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-95A3A www.
DataSheet4U.
com Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms DC 1ms Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 600 150 ...


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