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HMBT9018

Hi-Sincerity Mocroelectronics
Part Number HMBT9018
Manufacturer Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Published Jun 29, 2007
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200221 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : ...
Datasheet PDF File HMBT9018 PDF File

HMBT9018
HMBT9018

Overview
HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: HN200221 Issued Date : 2001.
07.
01 Revised Date : 2004.
09.
08 Page No.
: 1/4 HMBT9018 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9018 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
SOT-23 Features • High frequency • Very low capacitance Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.
.
.
-55 ~ +150 °C Junction Temperature.
.
+150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C).
225 mW www.
DataSheet4U.
com • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .
.
.
25 V VCEO Collector to Emitter Voltage 15 V VEBO Emitter to Base Voltage .
.
.
3 V IC Collector Current .
.
50 mA Electrical Characteristics (TA=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE Cob fT Min.
25 15 3 72 650 Typ.
Max.
100 100 500 0.
95 146 0.
7 pF MHz Unit V V V nA nA mV V IC=100uA IC=1mA IC=10uA VCB=20V VEB=2V IC=4mA, IB=0.
4mA VCE=10V, IC=4mA VCE=5V, IC=2mA VCB=10V, f=1MHz VCB=10V, IC=4mA, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Test Conditions Classification Of hFE Rank h...


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