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MGFS45V2527A

Part Number	MGFS45V2527A
Manufacturer	Mitsubishi Electric
Description	power GaAs FET
Published	Jun 29, 2007
Detailed Description	0.1±0.05 2.4±0.2 (0.094±0.008) < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W DE...
Datasheet	MGFS45V2527A PDF File

Overview

0.
1±0.
05 2.
4±0.
2 (0.
094±0.
008) < L/S band internally matched power GaAs FET > MGFS45V2527A 2.
5 – 2.
7 GHz BAND / 32W DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.
5 - 2.
7 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.
) @f=2.
5 - 2.
7GHz  High power gain GLP=12.
0dB (TYP.
) @f=2.
5 - 2.
7GHz  High power added efficiency P.
A.
E.
=45% (TYP.
) @f=2.
5 - 2.
7GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=34.
5dBm S.
C.
L APPLICATION  item 01 : 2.
5 - 2.
7 GHz band power amplifier  item 51 : 2.
5 - 2.
7 GHz band digital radio communication OUTLINE DRAWING Unit : millimeters (inches) 24.
0±0.
3(0.
945±0.
012) 1 0.
6± 0.
15 (0.
024±0.
006) 2.
0MIN.
(0.
079MIN.
) 2 17.
4±0.
2 (0.
685±0.
008) 8.
0±0.
2 (0.
315±0.
008) 2.
0MIN.
(0.
079MIN.
) 3 20.
4±0.
2(0.
803±0.
008) 15.
8(0.
622) 3...

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MGFS45V2527A power GaAs FET - Mitsubishi Electric

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