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IRLIZ34N

International Rectifier
Part Number IRLIZ34N
Manufacturer International Rectifier
Description POWER MOSFET
Published Jul 2, 2007
Detailed Description PD - 9.1329B IRLIZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Pac...
Datasheet PDF File IRLIZ34N PDF File

IRLIZ34N
IRLIZ34N

Overview
PD - 9.
1329B IRLIZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS … Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.
035Ω ID = 22A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need...


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