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IRF7338PBF

Part Number	IRF7338PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jul 2, 2007
Detailed Description	PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount...
Datasheet	IRF7338PBF PDF File

Overview

PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 12V P-Ch -12V 6 5 P-CHANNEL MOSFET RDS(on) 0.
034Ω 0.
150Ω Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multip...

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IRF7338PBF HEXFET Power MOSFET - International Rectifier

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