DatasheetsPDF.com

APTC60TDUM35P

Advanced Power Technology
Part Number APTC60TDUM35P
Manufacturer Advanced Power Technology
Description Triple dual Common Source Super Junction MOSFET Power Module
Published Jul 3, 2007
Detailed Description APTC60TDUM35P Triple dual Common Source Super Junction MOSFET Power Module D1 D3 D5 G1 G3 G5 VDSS = 600V RDSon = 35mΩ...
Datasheet PDF File APTC60TDUM35P PDF File

APTC60TDUM35P
APTC60TDUM35P

Overview
APTC60TDUM35P Triple dual Common Source Super Junction MOSFET Power Module D1 D3 D5 G1 G3 G5 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies S1 S1/S2 S3 S3/S 4 S5 S5/ S6 S2 G2 S4 G4 S6 G6 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D2 D4 D6 • • • D1 D3 D5 www.
DataSheet4U.
com These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-6 APTC60TDUM35P – Rev 0 September, 2004 Benefits • Outstanding performance at high frequency operation S1 S3 S5 S1/S2 S3/S4 S5/S6 • Direct mounting to heatsink (isolated package) S2 S4 S6 • Low junction to case thermal resistance G2 G4 G6 • Solderable terminals both for power and signal for easy PCB mounting D2 D4 D6 • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Current A Tc = 80°C 54 IDM Pulsed Drain current 200 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 35 mΩ PD Maximum Power Dissipation Tc = 25°C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 mJ EAS Single Pulse Avalanche Energy 1800 G1 G3 G5 APTC60TDUM35P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 37...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)