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APTC80H29SCT

Advanced Power Technology
Part Number APTC80H29SCT
Manufacturer Advanced Power Technology
Description Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
Published Jul 3, 2007
Detailed Description APTC80H29SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 800V R...
Datasheet PDF File APTC80H29SCT PDF File

APTC80H29SCT
APTC80H29SCT

Overview
APTC80H29SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 800V RDSon = 290mW max @ Tj = 25°C ID = 15A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Q1 CR1B CR3B Q3 Features · G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B Q4 · Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration www.
DataSheet4U.
com · · · · G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Max ratings 800 15 11 60 ±30 290 156 24 0.
5 670 Unit V A V mW W A mJ Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–7 APTC80H29SCT – Rev 1 May, 2004 Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy APTC80H29SCT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – So...


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