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MGFC40V4450

Mitsubishi Electric
Part Number MGFC40V4450
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
Published Jul 4, 2007
Detailed Description < C band internally matched power GaAs FET > MGFC40V4450 4.4 – 5.0 GHz BAND / 10W DESCRIPTION The MGFC40V4450 is an int...
Datasheet PDF File MGFC40V4450 PDF File

MGFC40V4450
MGFC40V4450

Overview
< C band internally matched power GaAs FET > MGFC40V4450 4.
4 – 5.
0 GHz BAND / 10W DESCRIPTION The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 3.
7 – 4.
2 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.
) @f=4.
4 – 5.
0GHz • High power gain GLP=10.
0dB (TYP.
) @f=4.
4 – 5.
0GHz • High power added efficiency P.
A.
E.
=32% (TYP.
) @f=4.
4 – 5.
0GHz • Low distortion [item -51] IM3=-45dBc (Typ.
) @Po=29.
0dBm S.
C.
L APPLICATION • item 01 : 4.
4 – 5.
0 GHz band microwave high power amplifier • item 51 : 4.
4 – 5.
0 GHz band digital radio commu...


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