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MRF5P20180HR6

Freescale Semiconductor
Part Number MRF5P20180HR6
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Jul 6, 2007
Detailed Description Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enh...
Datasheet PDF File MRF5P20180HR6 PDF File

MRF5P20180HR6
MRF5P20180HR6

Overview
Freescale Semiconductor Technical Data MRF5P20180HR6 Rev.
0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 mA, Pout = 38 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, Peak/Avg.
= 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37.
5 dBc @ 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ...


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