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MRF5P21180

Part Number	MRF5P21180
Manufacturer	Motorola
Description	N-Channel Enhancement-Mode Lateral MOSFET
Published	Jul 6, 2007
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub–Micron MOSFET Line RF Power Fie...
Datasheet	MRF5P21180 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.
84 MHz, Adjacent Channels Measured over 3.
84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz.
Distortion Products Measured over a 3.
84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg.
= 8.
5 dB @ 0.
01% Probabi...

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MRF5P21180 N-Channel Enhancement-Mode Lateral MOSFET - Motorola

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