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MRF6S19140HSR3

Freescale Semiconductor
Part Number MRF6S19140HSR3
Manufacturer Freescale Semiconductor
Description N-Channel Enhancement-Mode Lateral MOSFETs
Published Jul 6, 2007
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7/2005 RF Power Field Effect Transistors ...
Datasheet PDF File MRF6S19140HSR3 PDF File

MRF6S19140HSR3
MRF6S19140HSR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev.
2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg.
, Full Frequency Band.
IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 16 dB Drain Efficiency — 27.
5% IM3 @ 2.
5...


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