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MSC80917

Part Number	MSC80917
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF MICROWAVE TRANSISTOR
Published	Jul 6, 2007
Detailed Description	MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device De...
Datasheet	MSC80917 PDF File

Overview

MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications.
PACKAGE STYLE .
280 2L FL (B) 2 3 1 FEATURES INCLUDE: • Omnigold™ Metalization System • POUT 4.
0 W Min.
• GP = 10 dB MAXIMUM RATINGS IC www.
DataSheet4U.
com 1.
0 A 37 V 7.
5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER VCE PDISS TJ TSTG θJC CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE GP POUT η TC = 25 °C TEST CONDITIONS IC = 1.
0 mA IC = 5.
0 mA IE = 1.
0 mA VCE = 35 V VCE = 5.
0 V VCE = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.
0% MINIMUM TYPICAL MAXIMUM 45 20 3.
5 1.
0 20 10 4.
0 35 120 UNITS V V V mA PIN = 400 mW PULSE WIDTH = 10 µS dB W % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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