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MSC81035MP

Part Number	MSC81035MP
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Published	Jul 6, 2007
Detailed Description	MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . www.DataSheet4U.com REFRACTORY/GOLD METALL...
Datasheet	MSC81035MP PDF File

Overview

MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .
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www.
DataSheet4U.
com REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN.
WITH 10.
7 dB GAIN .
280 4LSL (S051) epoxy sealed ORDER CODE MSC81035MP BRANDING 81035MP PIN CONNECTION DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications.
This device is a direct replacement for the MSC1035MP.
MSC81035MP offers improved saturated ouput power and collector efficiency based on the test circuit described herein.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The MSC81035MP is housed in the IMPAC™ package with internal input matching.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
Collector 2.
Base 3.
Emitter 4.
Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 150 3.
0 55 250 − 65 to +150 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.
0 °C/W *Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions.
October 1992 1/4 MSC81035MP ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min.
Typ.
Max.
Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 10mA IE = 1mA IC = 10mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 50V IC = 500mA 65 3.
5 65 — 15 — — — — — — — — 5 120 V V V mA — Test Conditions Value Min.
Typ.
Max.
Unit POUT ηc GP Note: f = 1025 — 1150 MHz PIN = 3.
0W f = 1025 — 1150 MHz PIN = 3.
0W f = 1025 — 1150 MHz PIN = 3.
0W = = 10 µ Sec 1% VCC = 50V VCC = 50V VCC = 50V 35 10.
7 43 40 11.
2 48 — — — W ...

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