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MSC81325M

STMicroelectronics
Part Number MSC81325M
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Published Jul 6, 2007
Detailed Description MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATI...
Datasheet PDF File MSC81325M PDF File

MSC81325M
MSC81325M

Overview
MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .
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PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN.
WITH 6.
7 dB GAIN .
400 x .
400 2NLFL (S042) hermetically sealed ORDER CODE MSC81325M BRANDING 81325M PIN CONNECTION DESCRIPTION The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions.
Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency.
The MSC81325M is housed in the industry-standard AMPAC™ metal/ceramic hermetic package with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
Collector 2.
Base 3.
Emitter 4.
Base www.
DataSheet4U.
com PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 100˚C) 880 24 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.
17 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81325M ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min.
Typ.
Max.
Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 10mA IE = 1mA IC = 25mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 50V IC = 1A 65 3.
5 65 — 15 — — — — — — — — 25 120 V V V mA — Test Conditions Value Min.
Typ.
Max.
Unit POUT ηc GP Note: f = 1025 — 1150 MHz PIN = 70 W f = 1025 — 1150 MHz PIN = 70 W f = 1025 — 1150 MHz PIN = 70 W = = 10 µ Sec 1% VCC = 50 V VCC = 50 V VCC = 50 V 325 40 6.
7 360 41 7.
1 — — — W % dB Pulse Width Duty Cycle TEST CIRCUIT All dimensions are in inches.
Ref.
: Dwg.
No.
C127471 2/3 MSC81325M PACKAGE MECHANICAL DATA Inform...


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