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MW7IC18100NBR1

Part Number	MW7IC18100NBR1
Manufacturer	Freescale Semiconductor
Description	RF LDMOS Wideband Integrated Power Amplifiers
Published	Jul 6, 2007
Detailed Description	Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power ...
Datasheet	MW7IC18100NBR1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev.
1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz.
This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.
Final Application • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805 - 1880 MHz or 1930 - 1990 MHz Power Gain — 30 dB Power Added Efficiency — 48% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 = 800 mA...

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MW7IC18100NBR1 RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor

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