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APTM100DU18T

Advanced Power Technology
Part Number APTM100DU18T
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM100DU18T Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ T...
Datasheet PDF File APTM100DU18T PDF File

APTM100DU18T
APTM100DU18T

Overview
APTM100DU18T Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies G1 G2 S1 S NTC1 S2 NTC2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile www.
DataSheet4U.
com G2 S2 D2 D1 S D2 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM100DU18T– Rev 0 July, 2004 Tc = 25°C Max ratings 1000 43 33 172 ±30 180 780 25 50 3000 Unit V A V mΩ W A APTM100DU18T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Min 1000 Typ Max 500 2000 180 5 ±150 Unit V µA mΩ V nA VGS = 10V, ID = 21.
5A VGS ...


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