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APTM100TDU35P

Advanced Power Technology
Part Number APTM100TDU35P
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM100TDU35P Triple dual common source VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC...
Datasheet PDF File APTM100TDU35P PDF File

APTM100TDU35P
APTM100TDU35P

Overview
APTM100TDU35P Triple dual common source VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies S5/S6 MOSFET Power Module D1 D3 D5 G1 G3 G5 S1 S1/S2 S3 S3/S4 S5 S2 G2 S4 G4 S6 G6 D2 D4 D6 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability www.
DataSheet4U.
com D1 D3 D5 G1 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6 G6 D2 D4 D6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM100TDU35P– Rev 0 September, 2004 Max ratings 1000 22 17 88 ±30 350 390 25 50 3000 Unit V A V mΩ W A APTM100TDU35P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Condition...


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